Origin of luminescence from Si−-implanted (11¯02) Al2O3
作者： C. J. Park , Y. H. Kwon , Y. H. Lee , T. W. Kang , H. Y. Cho
DOI: 10.1063/1.1699471
关键词:
摘要: Cathodoluminescence (CL), photoluminescence, and transmission electron microscopy have been used to study the light-emitting structural properties of (11¯02) sapphire implanted with 30-keV Si ions subsequently annealed at temperatures up 1100 °C. This procedure creates oriented crystallites diameters in range 4–5 nm together extended defects parallel (0001) planes (11¯02) Al2O3. Several CL bands found Si−-implanted Al2O3(Al2O3:Si−) before and/or after annealing are compared those from O−- Al−-implanted samples. These related experiments, including temperature implant dose dependence, suggest that a yellow band (2.16 eV/574 nm) Al2O3:Si− is nanocrystal related, while others defect related.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(13)
Jia-Yu Zhang, Xi-Mao Bao, Neng-Sheng Li, Hai-Zhi Song, PHOTOLUMINESCENCE STUDY OF DEFECTS IN SI+ ION IMPLANTED THERMAL SIO2 FILMS Journal of Applied Physics. ,vol. 83, pp. 3609- 3613 ,(1998) , 10.1063/1.366578
Soumyendu Guha, Characterization of Si+ ion-implanted SiO2 films and silica glasses Journal of Applied Physics. ,vol. 84, pp. 5210- 5217 ,(1998) , 10.1063/1.368812
M. Toth, M. R. Phillips, Detection of Cr impurities in GaN by room temperature cathodoluminescence spectroscopy Applied Physics Letters. ,vol. 75, pp. 3983- 3985 ,(1999) , 10.1063/1.125528
A. Kaan Kalkan, S. J. Fonash, Shang-Cong Cheng, Band-tail photoluminescence in nanocrystalline Si Applied Physics Letters. ,vol. 77, pp. 55- 57 ,(2000) , 10.1063/1.126875
J. B. Khurgin, E. W. Forsythe, G. S. Tompa, B. A. Khan, Influence of the size dispersion on the emission spectra of the Si nanostructures Applied Physics Letters. ,vol. 69, pp. 1241- 1243 ,(1996) , 10.1063/1.117424
J.P. Biersack, L.G. Haggmark, A Monte Carlo computer program for the transport of energetic ions in amorphous targets Nuclear Instruments and Methods. ,vol. 174, pp. 257- 269 ,(1980) , 10.1016/0029-554X(80)90440-1
S. O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, G. Li, Cathodoluminescence depth profiling of ion-implanted GaN Applied Physics Letters. ,vol. 78, pp. 34- 36 ,(2001) , 10.1063/1.1337646
C.W. White, J.D. Budai, S.P. Withrow, S.J. Pennycook, D.M. Hembree, D.S. Zhou, T. Vo-Dinh, R.H. Magruder, Oriented Si and Ge Nanocrystals Formed in Al2O3 by Ion Implantation and Annealing MRS Proceedings. ,vol. 316, ,(1993) , 10.1557/PROC-316-487
Mingxiang Wang, Kunji Chen, Lei He, Wei Li, Jun Xu, Xinfan Huang, Green electro- and photoluminescence from nanocrystalline Si film prepared by continuous wave Ar+ laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film Applied Physics Letters. ,vol. 73, pp. 105- 107 ,(1998) , 10.1063/1.121782
X. Li, J. J. Coleman, Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 70, pp. 438- 440 ,(1997) , 10.1063/1.118174