Transparent In-Ga-Zn-O field effect glucose sensors fabricated directly on highly curved substrates

摘要: Abstract Fully transparent electronics are of increasing interest for biological applications, where the combination sensing and imaging can potentially improve patient healthcare diagnostics. Herein, we report high-performance, fully-transparent amorphous In-Ga-Zn-O field-effect transistor (a-IGZO FET) based biosensors fabricated directly on highly-curved glass substrates. The a-IGZO channel indium tin oxide electrodes were patterned tubes (1.0 mm radius) by microcontact printing self-assembled monolayers etching metal films. This approach led to FETs with excellent electronic performance, high on/off drain current ∼1.3 × 106, average electron mobility > 7.4 cm2/Vs, low hysteresis ∼0.6, V gate leakage ∼10−10 A. back-channel functionalized glucose oxidase make fully very sensitivity glucose. We have determined that limit detection is 170 μM. These results provide insight into new methods fabricating FET non-planar substrates, may open a range including catheters, flexible active electrode arrays, integration optical fibers.