Scanning Probe Microscopy on Low-Dimensional Electron Systems in III–V Semiconductors

摘要: Since the discovery of quantum Hall effect [1], a lot insight into behavior quasi-free electron systems housed in III-V-semiconductors has been gained by macroscopic measurements such as transport, magnetization, or optics [2], [3]. However, theoretical descriptions observed phenomena mostly rely on distinct local arrangement corresponding phases [4]–[8]. For example, it is believed that plateaus require localization electrons everywhere within sample except close to edge. The inside should reside at equipotential lines valleys and hills potential disorder. This specific description, well many others explaining other effects, triggered effort observe real space scanning probe techniques. In this chapter current state art different methods applied low-dimensional III-V semiconductors reviewed advantages drawbacks are discussed.