Discovery of nanoscale reduced surfaces and interfaces in VO2 thin films as a unique case of prewetting
作者： Xiaoyan Li , Alexandre Gloter , Hui Gu , Jian Luo , Xun Cao
DOI: 10.1016/J.SCRIPTAMAT.2014.01.029
关键词:
摘要: VO2 thin films grown on SiOx/Si substrates have been characterized at the sub-nanometer level by Cs-corrected scanning transmission electron microscopy along with energy loss spectroscopy. Reduced transitional regions of 2–3 nm thick were found both surface and interface, where vanadium valence progressively changes from +4 to +2. The formation these nanometer-thick surficial interfacial layers can be interpreted as a unique case prewetting, it explains degradation metal-to-insulator transition properties in films.
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