作者: H. S. Soliman , M. M. El-Nahass , A. Qusto
DOI: 10.1007/BF00544664
关键词:
摘要: Thin films of ZnIn2Se4 were deposited on quartz substrates at 297 K by the conventional thermal evaporation technique. The as-deposited amorphous. On annealing 623 under vacuum for 3 h, crystallized with a preferred (1 1 2) orientation corresponding to chalcopyrite-type structure. Films substrate heated 573 also crystalline. optical constants computed from measured transmittance and reflectance normal incidence light in wavelength range 400 2000 nm. analysis data gave direct gap 2.2 2.06 eV amorphous films, respectively. dispersion curve exhibited peak above absorption edge. An indirect 1.8 forbidden 1.75 deduced. A allowed transition 2.065 an 1.69 deduced crystalline substrate.