作者: VM Murukeshan , KV Sreekanth , Jeun Kee Chua
DOI: 10.5772/8195
关键词:
摘要: Optical (Photo) lithography has played a significant role in almost every aspects of modern micro-fabrication technology the recent years. It initiated transistor revolution electronics and optical component developments photonics. Advances this field have allowed scientists to improve resolution conventional photolithographic techniques, which is restricted by diffraction limit [Okazaki, 1991]. To overcome problem reduce critical dimension, several solutions were introduced. New research suggests that we may be able develop new low cost technique beyond limit. The minimum dimension (half-pitch resolution) achievable photolithography (Optical projection lithography) given 1 / half pitch CD k NA λ − = , where incident source wavelength, numerical aperture optics system constant value as indication effectiveness wavefront engineering techniques. half-pitch resolution, equation demands either decrease wavelength illumination light or increase system. Or short, fabrication sub-100nm features generally imposes requirement shorter laser sources. In context, challenges hinder enhancement approaches are (i) lack availability suitable ultra-short lasers, (ii) unavailability materials such photoresist for use at wavelengths. Recently, techniques like extreme ultraviolet (EUV) [Gwyn et al., 1998] Xray [Silverman, been proposed nanofabrication overcoming Here, reduced UV (smaller wavelength) get smaller features. Another reported immersion imaging increased inserting high index fluids (prism liquid) between last wafer surface [Wu, 2007]. But limited air absorption fluids. Approaches electron-beam can also used limit, but these serial process cannot throughput [Chen 2005]. Imprint another option [McAlpine 2003]. Nanometer scale possible stamping