Understanding the Difference in Soft-Error Sensitivity of Back-Biased Thin-BOX SOI SRAMs to Space and Terrestrial Radiation
作者： Chin-Han Chung , Daisuke Kobayashi , Kazuyuki Hirose
DOI: 10.1109/TDMR.2019.2949276
关键词:
摘要: High tolerance against soft errors is regarded as one of the advantages silicon-on-insulator (SOI) technology, well reduction in power consumption by applying a back-bias from under buried oxide layer (BOX). These are appealing to Internet-of-Things (IoT) and space applications. Recently, it was found heavy-ion experiment that static random-access memory (SRAM) fabricated with 65-nm thin-BOX SOI technology exhibited 100-fold soft-error sensitivity when received back-bias. This due long line-type formations multiple cell upsets (MCUs) caused radiation-induced potential perturbation BOX. However, devices similar tested terrestrial neutrons did not show such phenomenon another previous study. To understand this difference, present work, resistance-based model adopted. Prediction device MCUs different radiation environment also made. Then, characteristics secondary ions generated silicon studied using simulation.
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