Thin film semiconductor device, manufacture thereof and liquid crystal display device

摘要: PURPOSE:To increase a field effect mobility and to decrease an OFF current by forming channel layer of two-layer structure poly-Si hydrogenated amorphous silicon film having special thickness in reversely staggered thin transistor. CONSTITUTION:A gate electrode 2 is first formed on glass substrate, SiN insulating 3 deposited, (H film) deposited 10 40nm. Thereafter, it irradiated with excimer laser modify the H 4. Then, 5 upper part, Si part for transistor(TFT) insularly formed, source/drain electrodes 7 are then both as masks n-type corresponding removed. Thus, TFT high low can be driving peripheral circuit contained liquid crystal display substrate or image processing substrate.