Kinetics of ordered growth of Si on Si(100) at low temperatures.
作者： H. Jorke , H.-J. Herzog , H. Kibbel
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摘要: The temperature of the crystalline-disorder transition observed in ramp silicon films grown on (100) Si by molecular-beam epitaxy is found to depend strongly deposition rate. This observation can be modeled if growth random nucleation dimer strings, as suggested Tsao et al., assumed a thermally activated process which becomes frozen upon further deposition.
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