Sub-lithographic feature patterning using self-aligned self-assembly polymers
作者： Wai-kin Li , Haining Yang
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摘要: A method for conducting sub-lithography feature patterning of a device structure is provided. First, lithographically patterned mask layer that contains one or more openings diameter d formed by lithography and etching over an upper surface the structure. Next, self-assembling block copolymer applied then annealed to form single unit polymer w inside each openings, provided w
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