Processing techniques for silicon-based transient devices

摘要: Provided are methods of making a transient electronic device by fabricating one or more inorganic semiconductor components, metallic conductor components and supported mother substrate. The may independently comprise selectively transformable material and, optionally, further have preselected transience profile. transfer printed, thereby decoupling the component fabrication step from additional processing to provide desired functionality properties. A substrate layer is provided on top used facilitate handling, processing, and/or functionality.