Large Vacuum Rabi Splitting in a Single Nitride-Based Quantum WellMicrocavity
作者： S. Shojaei , M. Alavi
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摘要: Here, we report a theoretical detailed study of Vacuum Rabi Splitting (VRS) in the system Nitride Single Quantum Well (SQW) within semiconductor microcavity. Distributed Bragg Reflectors (DBRs) containing ZnTe/ZnSe multilayers including GaAs microcavity and ( SQW at center microcavity, has been considered. Upper lower exciton-polariton branches obtained through angle-dependent reflectance calculations performed by means Transfer Matrix Method (TMM). Large value 20.1(23.4) meV VRS is changing Aluminum (Indium) molar fraction Room Temperature (RT) for TM mode. Our findings show that SQW are better candidates rather than to achieve larger values VRS. pave way towards modeling polaritonic devices.
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