IGZO Thin-Film Light-Addressable Potentiometric Sensor

作者: Chia-Ming Yang , Chun-Hui Chen , Liann-Be Chang , Chao-Sung Lai

DOI: 10.1109/LED.2016.2614274

关键词:

摘要: An In-Ga-Zn oxide (IGZO) layer is applied, for the first time, as the semiconductor layer of a light-addressable potentiometric sensor (LAPS). The IGZO layer sputtered on the commercial …

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