Process for producing semiconductor devices by self-alignment technology
作者： Masafumi Shimbo
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摘要: A method of manufacturing semiconductor device wherein the self-alignment technique is employed to simplify process and includes steps successively depositing multiple layer masking films comprising a first, second third on an n-type Si region, forming island region peripheral portion film which etched away, by side-etching, from edges other films, selectively oxidized film, etching first using as mask fine contact windows between formed thin lifting-off removing leaving contacts windows, oxidizing surface film.
lens.org 参考文章(14)
Mau-Chung F. Chang, Chien-Ping Lee, Neng-Haung Sheng, Method for producing a field effect transistor ,(1986)
O Patent Division Kamei, O Patent Division Toyoda, Nobuyuki C, Toshiyuki C, Akimichi C, O Patent Division Hojo, Kiyoho C, O Patent Division Terada, Manufacturing method of Schottky gate FET ,(1984)
Michel Montier, Method for isolating the components of an integrated circuit ,(1974)
Yoshizi Kobayasi, Yoshinobu Arita, Tetsushi Sakai, Hironori Yamauchi, Bipolar transistors having vertically arrayed collector-base-emitter with novel polycrystalline base electrode surrounding island emitter and method of making same ,(1984)
Marcel Roche, Process for manufacturing integrated bi-polar transistors of very small dimensions ,(1982)
Harold H. Hosack, Edge etch method for producing narrow openings to the surface of materials ,(1975)
Shinji Saitoh, Atsuhiko Menjo, Production of Schottky barrier diode ,(1982)
Mammen Thomas, Process for isolation using self-aligned diffusion process ,(1986)
Albertus Oosenbrug, Volker Graf, Fabricating a field effect transistor utilizing a dummy gate ,(1986)
Masafumi Shimbo, Process for fabricating a vertical static induction device ,(1980)