Giant Ambipolar Rashba Effect in the Semiconductor BiTeI
作者： A Crepaldi , LAGT Moreschini , G Autes , C Tournier-Colletta , S Moser
DOI: 10.1103/PHYSREVLETT.109.096803
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摘要: … BiTeI is a noncentrosymmetric semiconductor for which … In this Letter, we show that in BiTeI the chemical potential can be moved … These results establish BiTeI as a versatile material, …
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