An infrared study of the shallow acceptor states in GaAs
作者： R F Kirkman , R A Stradling , P J Lin-Chung
DOI: 10.1088/0022-3719/11/2/024
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摘要: The shallow acceptor states in gallium arsenide have been studied by far-infrared Fourier transform spectroscopy. energy level structure observed photoconductivity is compared with the predictions of recent state theory and agreement found to be generally good. groundstate ionisation energies are 26.9 meV (carbon), 28.7 (magnesium), 30.6 (zinc) 34.8 (silicon). general features GaAs spectra also results previously obtained for Ge Jones Fisher (1965) InSb Kaplan (1973) deep manganese acceptors Chapman Hutchinson (1967). There strong similarity between other materials. This extends Zeeman exploited interpreting components terms theoretical predictions.
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