High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

作者: Yong Cai , Yugang Zhou , K.J. Chen , K.M. Lau

DOI: 10.1109/LED.2005.851122

关键词:

摘要: … electronegativity of the fluorine ions, the incorporated F ions can provide im… can be converted to E-mode HEMT. In our letter, the CF plasma treatment can result in a threshold voltage …

参考文章(10)
M. Asif Khan, Q. Chen, C. J. Sun, J. W. Yang, M. Blasingame, M. S. Shur, H. Park, Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors Applied Physics Letters. ,vol. 68, pp. 514- 516 ,(1996) , 10.1063/1.116384
V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida, AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz IEEE Electron Device Letters. ,vol. 23, pp. 455- 457 ,(2002) , 10.1109/LED.2002.801303
X. Hu, G. Simin, J. Yang, M. Asif Khan, R. Gaska, M.S. Shur, Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate Electronics Letters. ,vol. 36, pp. 753- 754 ,(2000) , 10.1049/EL:20000557
Akira Endoh, Yoshimi Yamashita, Keiji Ikeda, Masataka Higashiwaki, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura, Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance Japanese Journal of Applied Physics. ,vol. 43, pp. 2255- 2258 ,(2004) , 10.1143/JJAP.43.2255
V. Kumar, A. Kuliev, T. Tanaka, Y. Otoki, I. Adesida, High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate Electronics Letters. ,vol. 39, pp. 1758- 1760 ,(2003) , 10.1049/EL:20031124
Paul K. Chu, Recent developments and applications of plasma immersion ion implantation Journal of Vacuum Science & Technology B. ,vol. 22, pp. 289- 296 ,(2004) , 10.1116/1.1632920
J.W. Johnson, E.L. Piner, A. Vescan, R. Therrien, P. Rajagopal, J.C. Roberts, J.D. Brown, S. Singhal, K.J. Linthicum, R. Therrien, P. Rajagopal, J.C. Roberts, J.D. Brown, S. Singhal, K.J. Linthicum, 12 W/mm AlGaN-GaN HFETs on silicon substrates IEEE Electron Device Letters. ,vol. 25, pp. 459- 461 ,(2004) , 10.1109/LED.2004.831190
Y-F Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, T Wisleder, UK Mishra, P Parikh, None, 30-W/mm GaN HEMTs by field plate optimization IEEE Electron Device Letters. ,vol. 25, pp. 117- 119 ,(2004) , 10.1109/LED.2003.822667
W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, T. Ogura, H. Ohashi, High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior IEEE Transactions on Electron Devices. ,vol. 50, pp. 2528- 2531 ,(2003) , 10.1109/TED.2003.819248
J.S. Moon, D. Wong, T. Hussain, M. Micovic, P. Deelman, Ming Hu, M. Antcliffe, C. Ngo, P. Hashimoto, L. McCray, Submicron enhancement-mode AlGaN/GaN HEMTs device research conference. pp. 23- 24 ,(2002) , 10.1109/DRC.2002.1029488