Charge transport in layer semiconductors

摘要: Electron and hole-drift velocity is measured in the layer semiconductors HgI2, GaSe, PbI2 GaS, mainly on direction parallel to c-axis between 80 400 K. In electric field range question, electron proportional except case of where a superohmic behaviour observed. At 300 K mobility μe, = 100 cm2Vsec, μh 4 cm2Vsec for HgI2; μe 210 GaSe; 8 2 PbI2. The highest hole observed GaS cm2Vsec. Where it possible compare these data with values perpendicular c-axis, three-dimensional character energy bands near fundamental gap proved. For HgI2 GaSe we find no evidence large anisotropy charge-carrier transport properties usually attributed layered semiconductors. mobility-temperature dependences found are interpreted basis polar non-polar optical phonon scattering mechanisms, trapping model used. effective masses electrons holes reported and, first time, HgI2.