作者: Sihyun Kim , Dae Woong Kwon , Ryoongbin Lee , Dae Hwan Kim , Byung-Gook Park
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摘要: It is widely accepted that the operation mechanism of pH-sensitive ion sensitive field effect transistor (ISFET) can be divided into three categories; reaction surface sites, chemical modification insulator surface, and ionic diffusion bulk insulator. The first considered as main pH sensors due to fast response, while others with relatively slow responses disturb accurate detection. In this study, (often called drift effects) are investigated in silicon nanowire (SiNW) ISFETs. Based on dependence channel type SiNW, liquid gate bias, pH, it clearly revealed n-type SiNW results from H+ whereas p-type caused by (hydration)