Optical absorption, Raman spectra, and electrical properties of Mn-doped Cu2SnSe3 semiconductor compound

作者: C Rincón , G Marcano , R Casanova , GE Delgado , G Marín

DOI: 10.1002/PSSB.201552656

关键词:

摘要: Here we report a study of the absorption spectrum Mn-doped bulk crystal samples Cu2SnSe3 which are also characterized by X-ray diffraction (XRD), electrical properties, and Raman spectroscopy. From data it is found that above 145 K conduction mainly due to activation in valence band below this temperature variable-range-hopping Efros–Shklovskii type impurity band. Our XRD show presence SnSe SnSe2 binary secondary phases compound. coefficient at room fundamental edge determined be direct with gap energy EG = (0.41 ± 0.01) eV. An additional indirect band-to-band transition 0.9 eV, probably related SnSe, observed.

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