Flip chip FET device
作者： Michael Briere
DOI:
关键词:
摘要: In accordance with one embodiment of the invention, a semiconductor device includes conductive pad areas, and each area is electrically connected to plurality metal traces which are in turn diffusions. A contact element such as solder bump or via can be attached that elements arranged repeating pattern having first pitch. The also include translation traces, trace two more elements. Each have interconnect thereto. second pitch substantially greater than
lens.org 参考文章(89)
Richard K. Williams, Contact geometry for improved lateral MOSFET ,(1993)
Curt A Erickson, Flip chip solder bump pad ,(1998)
Robert J. Mattox, James A. Sellers, Syd R. Wilson, Process for making a multilayer metallization structure ,(1989)
William Wai Yan Ho, Connectivity-based approach for extracting layout parasitics ,(1998)
Helmuth R. Litfin, James C. Moyer, Martin J. Alter, Diamond shaped gate mesh for cellular MOS transistor array ,(1994)
N.X. Sun, Xiaoming Duan, Xin Zhang, Alex Huang, F.C. Lee, Design of a 4 MHz, 5V to 1V monolithic voltage regulator chip international symposium on power semiconductor devices and ic's. pp. 217- 220 ,(2002) , 10.1109/ISPSD.2002.1016210
Naoto Fujishima, Akio Kitamura, High withstand-voltage lateral MOSFET with a trench and method of producing the same ,(1995)
Hirokazu Honda, Flip chip type semiconductor device and method of manufacturing the same ,(2001)
Uttam Shyamalindu Ghoshal, Practical air dielectric interconnections by post-processing standard CMOS wafers ,(1999)
Richard K. Williams, Gate drive technique for a bidirectional blocking lateral mosfet. ,(1994)