Semiconductor Device with Improved Light Propagation
作者： Michael Shur , Alexander Dobrinsky
DOI:
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摘要: A semiconductor structure for use in fabricating a device having improved light propagation is provided. The includes at least one layer transparent to radiation target wavelength relevant operation of the device. During device, enters through first side and exits second side. At or comprises profiled surface. surface plurality vacancies fabricated material layer. Each vacancy walls configured partial diffusive scattering wavelength.
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