Method and manufacture of thin silicon on insulator (SOI) with recessed channel
作者： Werner A. Rausch , Bruce B. Doris , Huilong Zhu , Ying Zhang
DOI:
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摘要: An RSD FET device with a recessed channel is formed raised silicon sources and drains gate electrode structure on an SOI (a Si layer substrate) by the steps as follows. Form SiGe over SiGe. Etch through to form space reaching down layer. pair of regions separated space. Line walls internal etch stop inner sidewall spacers. inside spacers external adjacent between next spacers, dope regions, whereby in source/drain thereabove below level
lens.org 参考文章(12)
Douglas James Tweet, Jer-shen Maa, Jong-Jan Lee, Sheng Teng Hsu, Process integration of Si1-xGex CMOS with Si1-xGex relaxation after STI formation ,(2002)
Tiao-Yuan Huang, Forming a MOS transistor with a recessed channel ,(1996)
Mark S. Rodder, Richard A. Chapman, Method of forming a MOSFET using a disposable gate and raised source and drain ,(1997)
Jung Ho Lee, Transistor in a semiconductor device and method of manufacturing the same ,(2000)
Sneedharan Pillai Sneelal, Francis Youg Wee Poh, James Yong Meng Lee, Alex See, CK Lau, Ganesh Shankar Samudra, None, Process flow for a performance enhanced MOSFET with self-aligned, recessed channel ,(2002)
Zoran Krivokapic, Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate ,(2002)
Jayarama N. Shenoy, Method of making a MOSFET structure having improved source/drain junction performance ,(2001)
Omer H. Dokumaci, Meikei Ieong, Victor Ku, Thomas S. Kanarsky, Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS ,(2002)