摘要: The magnetic susceptibility of donor centers in semiconductors is calculated for the case small interactions between closely adjacent donors. A hydrogenic model assumed centers. random distribution centers, and variation energy interaction with separation distance pairs donors taken into consideration. twofold modification Curie law (which correct independent donors) predicted by resulting expression, namely. a curvature as well decrease slope plot versus inverse temperature. Both these effects increase density, becoming appreciable silicon 10/ sup 17/-l0/sup 18/ donors/cm/sup 3/ germanium range around l0/sup 16/ 3/. theory good agreement measurements. (auth)
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sci-hub.se 参考文章(9)
Raymond Bowers, Magnetic Susceptibility of Germanium Physical Review. ,vol. 108, pp. 683- 689 ,(1957) , 10.1103/PHYSREV.108.683
E. Sonder, D. K. Stevens, Magnetic Properties ofN-Type Silicon Physical Review. ,vol. 110, pp. 1027- 1034 ,(1958) , 10.1103/PHYSREV.110.1027
E. Mooser, Magnetic Susceptibility of Impurity-Trapped Electrons and Holes in Semiconductors Physical Review. ,vol. 100, pp. 1589- 1592 ,(1955) , 10.1103/PHYSREV.100.1589
F. T. Hedgcock, THE EFFECT OF CONCENTRATION ON THE MAGNETIC SUSCEPTIBILITY OF TRAPPED ELECTRONS AND HOLES IN SEMICONDUCTORS Canadian Journal of Physics. ,vol. 37, pp. 381- 383 ,(1959) , 10.1139/P59-041
Eduard Teller, über das Wasserstoffmolekülion European Physical Journal. ,vol. 61, pp. 458- 480 ,(1930) , 10.1007/BF01330302
Hubert M. James, Albert Sprague Coolidge, The Ground State of the Hydrogen Molecule The Journal of Chemical Physics. ,vol. 1, pp. 825- 835 ,(1933) , 10.1063/1.1749252
Hubert M. James, Albert Sprague Coolidge, Richard D. Present, The Heitler‐London Repulsive State of Hydrogen The Journal of Chemical Physics. ,vol. 4, pp. 187- 193 ,(1936) , 10.1063/1.1749817
On the Ground State of (H$_{2}$), the Molecular Ion (H$_{2}$ +) and Wave Mechanics Proceedings of The Royal Society A: Mathematical, Physical and Engineering Sciences. ,vol. 152, pp. 503- 514 ,(1935) , 10.1098/RSPA.1935.0205
F. J. Morin, J. P. Maita, Electrical Properties of Silicon Containing Arsenic and Boron Physical Review. ,vol. 96, pp. 28- 35 ,(1954) , 10.1103/PHYSREV.96.28