Measurement of Two Deep H Bonding Levels in Device Quality Glow Discharge a-SI:H

摘要: We present the results of H effusion studies on device-quality glow discharge deposited hydrogenated amorphous silicon (a-Si:H) films. measure decrease in amount Si-H infrared absorption as pieces an a-Si:H sample are annealed isothermally at temperatures from 425°C to 500°C, until more than 95% initial is evolved. use rate equation for loss due annealing calculate activation energy effusion. For anneals below 500°C we observe two distinct processes, a fast process corresponding release ∼ 70% total (∼10 at. %) contained sample, and slower remainder. The yields ∼1.4 eV; this level widely observed diffusion coefficient measurements. A similar analysis slow ∼2.1 eV constant prefactor higher that process. suggest component represents first determination depth “isolated” commonly nuclear magnetic resonance experiments.