Diblock copolymer directed self-assembly for CMOS device fabrication

摘要: We present our recent work on using diblock copolymer directed self-assembly for the fabrication of silicon MOSFETs. Instead to assemble entire device, we plan utilize perform one critical step complex MOSFET process flow in beginning. Initial results PS-b-PMMA define pores with hexagonal array having diameter 20 nm contact hole patterning will be described. Potential integration issues making MOSFETs also addressed.