Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors.
作者： Junggwon Yun , Kyoungah Cho , Sangsig Kim
DOI: 10.1088/0957-4484/21/23/235204
关键词:
摘要: Complementary NAND and NOR gates composed of p-channel HgTe-nanocrystal (NC) films n-channel HgSe-NC were constructed on back-gate patterned plastic substrates. The gate was made two HgTe-p-channel thin film transistors (TFTs) in parallel HgSe-n-channel TFTs series. built up with both mobility on/off ratio for the estimated to be 0.9 cm2 V − 1 s 10, respectively, those measured 1.8 102, respectively. operated gains 1.45 1.63 transition widths 7.8 6.2 V, at room temperature air. In addition, operations logics are reproducible 1000 strain cycles.
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