Influence of Ti on CoSi2 nucleation
作者： C. Detavernier , R. L. Van Meirhaeghe , F. Cardon , K. Maex , W. Vandervorst
DOI: 10.1063/1.1325401
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摘要: Evidence is presented that impurities present in the precursor phase may influence nucleation of a new phase. In case CoSi→CoSi2 transition, it found presence small amounts Ti (originating from either capping layer or interlayer) causes an increase CoSi2 temperature. Moreover, for increasing amount Ti, we observed transition polycrystalline over preferential (220) orientation towards epitaxial (400) CoSi2. The model propose entails point view on mechanism interlayer mediated epitaxy.
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