Novel composites of Zn1−xCdxO (x = 0, 0.05, 0.1) thick films for optoelectronic device application

作者: Rayees Ahmad Zargar , Santosh Chackrabarti , Md. Shahabuddin , Jitendra Kumar , Manju Arora

DOI: 10.1007/S10854-015-3683-Y

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摘要: The pure and cadmium doped zinc oxide (Cd–ZnO) thick films were deposited on glass substrates by screen printing method from their nanopowders, followed sintering at 550 °C to obtain desired stoichiometry better adherence of films. structural, morphological, optical electrical properties the samples studied X-ray diffraction (XRD), scanning electron microscopy (SEM) with UV–visible spectroscopy, Fourier transform infrared photoluminescence (PL) two probe techniques. XRD patterns confirm hexagonal wurtzite structure single phase all SEM micrographs reveal granular grains porosity in incorporation ZnO lattice is confirmed IR transmission Raman spectrum. E2 (high) phonon multiphoton modes are observed 433 1136 cm−1 respectively spectra. recombination free neutral bound excitons near band edge emission PL measurement confirms direct gap that decrease 3.27 3.18 eV resistivity shows semiconducting nature decreasing activation energy 0.31 0.26 eV increasing Cd2+ content due increase parameters doping bigger ions Zn sites ZnO.

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