High-rate, room-temperature synthesis of amorphous silicon carbide films from organo-silicon in high-density helicon wave plasma
作者： Xiao Ma , Dongsheng Xu , Peiyu Ji , Chenggang Jin , James Lin
DOI: 10.1016/J.VACUUM.2019.03.004
关键词:
摘要: Abstract In this study, amorphous silicon carbide (α-SiC) films were synthesized on 316L stainless steel by low pressure, high density helicon wave plasma (HWP), using tetramethylsilane (TMS) as the single-source precursor which is organometallic compound. The influence of substrate bias voltage (Vs) surface morphology, structure, chemical composition, and mechanical properties α-SiC investigated. increase VS from 0 to 200 V causes removal organic moieties film results in formation condition for α-SiC. maximum deposition rate coating up 250 nm/s, related high-density (>1019 m−3) production HWP [1]. X-ray photoelectron spectroscopy (XPS) Fourier Transform Infrared Spectrometer (FTIR) imply that mainly composed SiC. deposited at VS = 200 V appear be high-hardness (up 33.6 GPa) materials with very small roughness (∼0.5 nm). Considering easy control voltage, our work provides a new method achieving high-yield room temperature.
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sci-hub.se 参考文章(37)
A. Lee Smith, Analysis of silicones ,(1974)
KCF Nass, PA Radi, DMG Leite, M Massi, AS da Silva Sobrinho, RCL Dutra, L Vieira, DAP Reis, None, Tribomechanical and structural properties of a-SiC:H films deposited using liquid precursors on titanium alloy Surface & Coatings Technology. ,vol. 284, pp. 240- 246 ,(2015) , 10.1016/J.SURFCOAT.2015.06.080
G. Socrates, Infrared characteristic group frequencies ,(1980)
S. Kaci, A. Keffous, S. Hakoum, A. Mansri, Hydrogen sensitivity of the sensors based on nanostructured lead sulfide thin films deposited on a-SiC:H and p-Si(100) substrates Vacuum. ,vol. 116, pp. 27- 30 ,(2015) , 10.1016/J.VACUUM.2015.02.024
J Robertson, Diamond-like amorphous carbon Materials Science & Engineering R-reports. ,vol. 37, pp. 129- 281 ,(2002) , 10.1016/S0927-796X(02)00005-0
L. Thomas, L. Maillé, J.M. Badie, M. Ducarroir, Microwave plasma chemical vapour deposition of tetramethylsilane: correlations between optical emission spectroscopy and film characteristics Surface & Coatings Technology. ,vol. 142, pp. 314- 320 ,(2001) , 10.1016/S0257-8972(01)01081-7
Seong-Min Jeong, Deok-Hui Nam, Byeong Geun Kim, Ji-Young Yoon, Myung-Hyun Lee, Kyung-Hun Kim, Young Joon Yoon, Won-Seon Seo, Synthesis of α-SiC from tetramethylsilane by chemical vapor deposition at high temperature Applied Physics Express. ,vol. 7, pp. 025501- ,(2014) , 10.7567/APEX.7.025501
Qijin Cheng, S Xu, Jidong Long, Shiyong Huang, Jun Guo, Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition Nanotechnology. ,vol. 18, pp. 465601- ,(2007) , 10.1088/0957-4484/18/46/465601
L. Thomas, E. Tomasella, J.M. Badie, R. Berjoan, M. Ducarroir, Electrical measurements and optical emission spectroscopy of silicon-carbon alloys grown by PACVD: Correlation with film microstructure Chemical Vapor Deposition. ,vol. 9, pp. 130- 138 ,(2003) , 10.1002/CVDE.200306233
Chaehwan Jeong, Young-Baek Kim, Suk-Ho Lee, Jin Hyeok Kim, Preparation of born-doped a-SiC:H thin films by ICP-CVD method and to the application of large-area heterojunction solar cells. Journal of Nanoscience and Nanotechnology. ,vol. 10, pp. 3321- 3325 ,(2010) , 10.1166/JNN.2010.2281