Impact of Effective Mass on the Scaling Behavior of the $f_{T}$ and $f_{\bf max}$ of III–V High-Electron-Mobility Transistors

摘要: Among the contenders for applications at terahertz frequencies are III-V high-electron-mobility transistors (HEMTs). In this paper, we report on a tendency devices with low effective-mass channel materials to exhibit saturation in their unity-current-gain and unity-power-gain cutoff (fT fmax) downscaling of gate length. We focus InGaAs GaN HEMTs examine lengths from 50 nm down 10 nm. A self-consistent, quantum-mechanical solver based method nonequilibrium Green's functions is used quasistatically extract fT intrinsic devices. This model then combined series resistances heterostructure stack parasitic capacitances metal contacts develop complete extrinsic model, fmax. It shown that fmax will saturate, i.e., attain maximum value ceases increase as length scaled down, caused by effective mass materials. also have faster long lengths, but consequence lower mass, they experience more rapid than HEMTs, such two comparable very short (~10 nm). On other hand, due favorable parasitics, it higher all considered paper.