Organic field effect transistors
作者： Richard Henry Friend , Henning Sirringhaus , Gitti Frey , Kieran John Reynolds
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摘要: A field effect transistor is provided which comprises a gate electrode, source drain at least one organic semiconducting layer, and hole transport layer for transferring holes from said electrodes to wherein layered metal chalcogenide. Processes depositing thin of dichalcogenide on substrate producing top structures chalcogenide in the manufacture transistors according invention are also provided.
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