Light-receiving element and its manufacturing method, and light-receiving element with built-in circuit

摘要: PROBLEM TO BE SOLVED: To provide a light-receiving element which enables rapid response with high sensitivity respect to the light of short wavelength. SOLUTION: Optical carriers generated inside an N-type impurity diffusion layer 8, formed on surface epitaxial 6 P-type semiconductor substrate 1 move into depletion by built-in field made concentration slope diffusion, and photocurrent is generated. If 8 high, life time optical lowered it recombined, before they reach layer, disappear, thus lowering quantum efficiency element. shallow, resistance series photodiode becomes speed slow. Therefore, whose lower than 1x10 20 cm -3 , ranging depth 0.3μm or less, exceeding 0.1μm from 6. Alternately, 19 larger 1.2μm smaller, COPYRIGHT: (C)2004,JPO