ZnO dense nanowire array on a film structure in a single crystal domain texture for optical and photoelectrochemical applications

摘要: A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of dense nanowire array on thick film has been homogeneously synthesized a-plane sapphire substrates areas through one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: [] oriented ZnAl2O4 buffer layer was formed at the substrate interface via diffusion reaction process during CVD process, providing improved epitaxial conditions that enable synthesis high structure. optoelectronic sample evidenced by free exitonic emissions in low-temperature photoluminescence spectroscopy. carrier density ∼1017 cm−3 with an n-type conductivity obtained electrochemical impedance analysis. Finally, demonstrated to be ideal template for further ZnO–ZnGa2O4 core–shell fabricated revealed enhanced anticorrosive ability photoelectrochemical performance when used as photoanode water splitting application.