Theoretical Studies of the Transient Response of Highly Photoexcited Carriers in Semiconductors

作者: P. Kocevar

DOI: 10.1007/978-94-009-2419-2_9

关键词:

摘要: We review our present theoretical understanding of ultrafast relaxation processes in highly photoexcited electron-hole plasmas polar semiconductors, with special emphasis on the picosecond and subpicosecond spectroscopy bulk GaAs GaAs-based quantum-well structures.

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