Bipolar resistive switching characteristics of a sol-gel InZnO oxide semiconductor
作者： Chih-Chieh Hsu , Che-Chang Tsao , Yu-Han Chen , Xuan-Zhi Zhang
DOI: 10.1016/J.PHYSB.2019.02.048
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摘要: Abstract This paper investigates the bipolar resistive switching characteristics of a sol-gel Ga-free InZnO (IZO) oxide semiconductor. Resistive random-access memories (RRAMs) using IZO films as layers are fabricated. The effects concentration solution and thickness layer on RRAM performance studied. fabricated low exhibits resistance in high state (RHRS). window is only ∼2. A higher can provide an with lower oxygen vacancy content. However, substantial increase RHRS not observed. slightly increases from 350 to 500 Ω, 2.7. When further increasing layer, observable obtained. endurance test shows that 1.5 × 105 Ω significantly 102. composition crystallinity analyzed by X-ray photoelectron spectroscopy (XPS) diffraction (XRD). Transmission electron microscopy (TEM) used examine thicknesses. carrier conduction mechanisms mechanism also
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