High Brightness InP Micropillars Grown on Silicon with Fermi Level Splitting Larger than 1 eV

摘要: The synthesis of III-V nanowires on silicon substrates is promising for reducing the manufacturing and balance-of-systems costs based photovoltaics. However, performances nanowire solar cells have not yet been close to their bulk counterparts as nanostructures are fundamentally challenged by enhanced non-radiative losses due large surface-to-volume ratios, resulting in significantly reduced external fluorescence yields spontaneous emission therewith serious penalties open-circuit voltage. In this work, we report characteristics micron-sized, single-crystalline, Wurzite-phased InP crystals directly grown photovoltaics applications. We found that under illumination intensities equivalent 1 sun Fermi level splits can reach 0.89 eV undoped pillars, 0.53 below bandgap wurtzite material at 1.42 e V. brightness pillars be improved doping which boosts radiative recombination rates inside increases more than an order magnitude. n-doped whose absorption edge shifted 1.49 Burstein-Moss effect, Fermi-level larger found, 0.46 edge. Long carrier lifetimes 6.9 ns room temprature further attest quality pillars. These results confirm a materials choice photovoltaic devices light absorber exhibits ratios.