High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric
作者： Murali Gedda , Nimmakayala VV Subbarao , Sk Md Obaidulla , Dipak K Goswami , None
DOI: 10.1063/1.4834355
关键词:
摘要: Polyvinyl alcohol (PVA) and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a carrier mobility (μEF) value 1.11 cm2/Vs. The high molecules is attributed to better capacitive coupling between channel through organic-inorganic dielectric layer. Our measurements also demonstrated way determine thicknesses process condition OFETs.
scitation.org
harvard.edu
osti.gov
aip.org
core.ac.uk 
sci-hub.se 参考文章(23)
T. W. Hickmott, Interface states at the anodized Al2O3-metal interface Journal of Applied Physics. ,vol. 89, pp. 5502- 5508 ,(2001) , 10.1063/1.1366653
Jian Zhang, Jun Wang, Haibo Wang, Donghang Yan, None, Organic thin-film transistors in sandwich configuration Applied Physics Letters. ,vol. 84, pp. 142- 144 ,(2004) , 10.1063/1.1638634
Tsuyoshi Sekitani, Ute Zschieschang, Hagen Klauk, Takao Someya, Flexible organic transistors and circuits with extreme bending stability Nature Materials. ,vol. 9, pp. 1015- 1022 ,(2010) , 10.1038/NMAT2896
Britt-Elfriede Schuster, Tamara V. Basova, Vladimir A. Plyashkevich, Heiko Peisert, Thomas Chassé, Effects of temperature on structural and morphological features of CoPc and CoPcF16 thin films Thin Solid Films. ,vol. 518, pp. 7161- 7166 ,(2010) , 10.1016/J.TSF.2010.06.030
A. F. Hebard, S. A. Ajuria, R. H. Eick, Interface contribution to the capacitance of thin‐film Al‐Al2O3‐Al trilayer structures Applied Physics Letters. ,vol. 51, pp. 1349- 1351 ,(1987) , 10.1063/1.98675
WY Tong, AB Djurišić, MH Xie, ACM Ng, KY Cheung, WK Chan, YH Leung, HW Lin, S Gwo, None, Metal phthalocyanine nanoribbons and nanowires Journal of Physical Chemistry B. ,vol. 110, pp. 17406- 17413 ,(2006) , 10.1021/JP062951Q
L A Majewski, R Schroeder, M Grell, Flexible high capacitance gate insulators for organic field effect transistors Journal of Physics D. ,vol. 37, pp. 21- 24 ,(2004) , 10.1088/0022-3727/37/1/005
C. Tanase, P. W. M. Blom, D. M. de Leeuw, E. J. Meijer, Charge carrier density dependence of the hole mobility in poly(p-phenylene vinylene) Physica Status Solidi (a). ,vol. 201, pp. 1236- 1245 ,(2004) , 10.1002/PSSA.200404340
S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, Y. Iwasa, Control of carrier density by self-assembled monolayers in organic field-effect transistors Nature Materials. ,vol. 3, pp. 317- 322 ,(2004) , 10.1038/NMAT1105
Hui Jiang, Ke Jie Tan, Keke K. Zhang, Xiaodong Chen, Christian Kloc, Ultrathin organic single crystals: fabrication, field-effect transistors and thickness dependence of charge carrier mobility Journal of Materials Chemistry. ,vol. 21, pp. 4771- 4773 ,(2011) , 10.1039/C0JM04383D