Magnetospectroscopy of MOCVD Grown GaInSb/Gasb Strained Layer Quantum Wells

摘要: Biaxial strain in a pseudomorphically grown heterostructure provides further item the toolkit of band structure engineer, complementing alloying and quantum confinement. It is valuable asset for constructing new materials offering improved optoelectronic device performance. Modeling design devices an important step[1–4] fabrication process demands knowledge these factors strain, confinement material composition on electronic structure. The effective Hamiltonian economical accurate means describing modeling purposes which automatically includes simplifications due to symmetry.