MIS semiconductor device having a tapered top gate and a capacitor with metal oxide dielectric material
作者： Shunpei Yamazaki , Yasuhiko Takemura
DOI:
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摘要: The invention is concerned with the fabrication of a MIS semiconductor device high reliability by using low-temperature process. Disclosed method fabricating device, wherein doped regions are selectively formed in substrate or thin film, provisions then made so that laser equivalent high-intensity light radiated also onto boundaries between and their adjacent active region, from above to accomplish activation.
google.nl 参考文章(39)
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