Dielectrically isolated semiconductor substrate
作者： O Patent Division Furukawa , O Patent Division Yamaguchi , O Patent Division Nakagawa , Yoshihiro C , O Patent Division Fukuda
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摘要: A dielectrically isolated semiconductor wafer substrate includes first and second semiconductive layers bonded to each other by a direct bonding technique in such manner that an insulative layer is sandwiched therebetween. The silicon having (100) or (110) crystal surface orientation, while the (111) orientation. Thereafter, peripheral portion of resultant removed, slightly smaller size obtained which provided with additionally formed new orientation flat.
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