Effect of oxygen plasma etching on graphene studied using Raman spectroscopy and electronic transport measurements

摘要: In this paper, we report a study of graphene and field effect devices after their exposure to series short pulses oxygen plasma. Our data from Raman spectroscopy, back-gated field-effect magnetotransport measurements are presented. The intensity ratio between 'D' 'G' peaks, ID/IG (commonly used characterize disorder in graphene), is observed initially increase almost linearly with the number (Ne) plasma-etching pulses, but later decreases at higher Ne values. We also discuss implications our for extracting crystalline domain sizes ID/IG. At highest value measured, '2D' peak found be nearly suppressed while still prominent. Electronic transport plasma-etched show an up-shifting Dirac point, indicating hole doping. mobility, quantum Hall states, weak localization various scattering lengths moderately etched sample. findings valuable understanding effects plasma etching on physics disordered through artificially generated defects.