(1-x)SrBi2Ta2O9-xBi3Ti(TayNb1-y)O9 Layered Structure Solid Solutions for Ferroelectric Random Access Memory Devices
作者： P. C. Joshi , S. O. Ryu , S. Tirumala , S. B. Desu
DOI: 10.1557/PROC-493-215
关键词:
摘要: Thin films of layered-structure solid-solution material, (1−x)SrBi2Ta2O9−xBi3Ti(TayNb1−y)O9, have shown much improved ferroelectric properties compared to SrBi2Ta2O9, a leading candidate material for random access memory applications. The higher P r , T c and lower crystallization temperature the thin solid solution promise solve many problems with present materials interest. were fabricated by metalorganic deposition technique using room processed alkoxide-carboxylate precursor characterized in terms structural, dielectric, properties. It was possible obtain pyrochlore free crystalline phase at an annealing 600 °C. effects excess Bi content on film microstructure analyzed. electrical measurements conducted metal-ferroelectric-metal (MFM) capacitors Pt as top bottom electrode. good annealed 650 For example, 0.7SrBi2Ta2O9-0.3Bi3TiTaO9 composition, which °C, exhibited typical 2P E values 12.4 μC/cm2 80 kV/cm, respectively. low leakage current density, fatigue characteristics under bipolar stressing least up 1010 switching cycles, retention after about 106 s indicating favorable behavior
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