A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors
作者： Seonghearn Lee , B.R. Ryum , Sang Won Kang
DOI: 10.1109/16.277373
关键词:
摘要: We propose a new parameter extraction method for advanced polysilicon emitter bipolar transistors. This is based on the predetermination of equivalent circuit parameters using analytical expressions de-embedded Z-parameters these devices. These values are used as initial process optimization. The entire device circuit, containing RF probe pad and interconnection extracted by test structures, optimized to fit measured S-parameters eliminating de-embedding errors due imperfection structures. determined this shows excellent agreement with from 0.1 26.5 GHz. >
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