Doping of epitaxial silicon

摘要: Abstract In the doping of epitaxial Si gas phase is analyzed assuming thermodynamic equilibrium, and equilibrium partial pressures various atomic aggregates arsenic phosphorus are calculated. Boron, when present in phase, probably form a subhydride (e.g., BH3. Equilibrium processes such as formation solid solution condensation discussed theoretically. Epitaxial grown by hydrogen reduction SiCl4 using hydrides boron, dopant sources. The results indicate that incorporation these dopants independent deposition rate represents an process. concentration boron layer increases exponentially with temperature whereas decreases increasing explained solubility mechanism.