Pressure induced structural transitions in CoSi2

摘要: Results of diamond anvil cell based electrical resistance and x-ray diffraction measurements under pressure at room temperature on CoSi2 are reported. The evolution powder patterns confirms two structural transitions near 0.4 13 GPa. There is small isostructural (0.71%) volume collapse 20 lines gradually broaden with increasing pressure. A disorder that involves breaking Co‐Si Si‐Si bonds occupancy vacant sites, which results in an intermediate bonding topology between CaF2 adamantine structures, suggested to be responsible for this behaviour. This could a general feature structured materials (with directional nature) because the presence ordered vacancies competing structure.