Nanoscale interaction layer at the interface between Al films and SiO2 substrates of Al/AlOx/Al Josephson tunnel junctions
作者： L. J. Zeng , T. Greibe , S. Nik , C. M. Wilson , P. Delsing
DOI: 10.1063/1.4801798
关键词:
摘要: An interaction layer is found at the Al/SiO2 interface in Al/AlOx/Al tunnel junctions grown on SiO2 substrates. The amorphous intermixing has an average thickness of about 5 nm. We present detailed structure this interfacial as determined by transmission electron microscopy. contains alumina with aluminum being octahedrally coordinated according to energy loss spectroscopy analysis rather than tetrahedrally coordinated, where latter coordination most common type alumina. Depth profiles Al-O and Si-O bonding characteristics were also investigated using near edge structure.
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sci-hub.se 参考文章(30)
M. Mariantoni, J. Wenner, P. O'Malley, D. Sank, R. Barends, T. C. White, H. Wang, E. Lucero, John M. Martinis, Y. Yin, A. N. Cleland, Y. Chen, M. Lenander, J. Kelly, J. Zhao, R. C. Bialczak, J. J. A. Baselmans, Loss and decoherence due to stray infrared light in superconducting quantum circuits arXiv: Mesoscale and Nanoscale Physics. ,(2011) , 10.1063/1.3638063
G. Zimmerli, T. M. Eiles, R. L. Kautz, John M. Martinis, Noise in the Coulomb blockade electrometer Applied Physics Letters. ,vol. 61, pp. 237- 239 ,(1992) , 10.1063/1.108195
Rik Brydson, Multiple scattering theory applied to ELNES of interfaces Journal of Physics D. ,vol. 29, pp. 1699- 1708 ,(1996) , 10.1088/0022-3727/29/7/004
Z. Kim, B. Suri, V. Zaretskey, S. Novikov, K. D. Osborn, A. Mizel, F. C. Wellstood, B. S. Palmer, Decoupling a Cooper-pair box to enhance the lifetime to 0.2 ms. Physical Review Letters. ,vol. 106, pp. 120501- ,(2011) , 10.1103/PHYSREVLETT.106.120501
K Kimoto, K Kobayashi, T Aoyama, Y Mitsui, Analyses of composition and chemical shift of silicon oxynitride film using energy-filtering transmission electron microscope based spatially resolved electron energy loss spectroscopy Micron. ,vol. 30, pp. 121- 127 ,(1999) , 10.1016/S0968-4328(99)00023-2
O. Astafiev, Yu. Pashkin, Y. Nakamura, T. Yamamoto, J. Tsai, Quantum noise in the josephson charge qubit. Physical Review Letters. ,vol. 93, pp. 267007- ,(2004) , 10.1103/PHYSREVLETT.93.267007
Y. Miura, K. Hirose, Suppression of thermally induced reactions at SiO2/single‐crystalline Al interfaces Journal of Applied Physics. ,vol. 79, pp. 559- 561 ,(1996) , 10.1063/1.360866
K. Kimoto, Y. Matsui, T. Nabatame, T. Yasuda, T. Mizoguchi, I. Tanaka, A. Toriumi, Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures Applied Physics Letters. ,vol. 83, pp. 4306- 4308 ,(2003) , 10.1063/1.1629397
Earl J. Kirkland, Malcolm G. Thomas, A high efficiency annular dark field detector for STEM. Ultramicroscopy. ,vol. 62, pp. 79- 88 ,(1996) , 10.1016/0304-3991(95)00092-5
Y. Miura, K. Hirose, Direct observation of a thin reacted layer buried at Al/SiO2 interfaces Journal of Applied Physics. ,vol. 77, pp. 3554- 3556 ,(1995) , 10.1063/1.359536