Chapter 10 Si-Based alloys: SiGe and SiGe:C

摘要: Summary The primary differences between the deposition of traditional Si epi and that alloys Si1−xGex Si1−xGex:C are requirements to process at low temperatures take into consideration different lattice constants materials. Tremendous benefits for bipolar technologies have been demonstrated with HBT DFT structures which capable integration CMOS devices. Applications enhanced mobility channels in both NMOS PMOS devices, as well elevated source/drain structure, offer promise continued development higher-speed Optoelectronics applications using superlattices appear be feasible lower-cost pseudo-substrates GaAs solar cells may indeed possible. materials can conveniently carried out production load-locked single-wafer reactors. throughputs these processes highly dependent upon details film specification thermal budget constraints, but often exceed seven wafers per hour, regardless wafer size. A complete recipe a has provided reference point development. Modifications this growth graded Ge content presented. No more excuses, it's time grow films.