Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 /spl mu/m
作者： N. Yokouchi , N. Yamanaka , N. Iwai , Y. Nakahira , A. Kasukawa
DOI: 10.1109/3.544762
关键词:
摘要: Tensile-strained GaInAsP-InP quantum-well (QW) lasers emitting at 1.3 /spl mu/m are investigated. Low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is used for crystal growth. High-resolution X-ray diffraction shows good agreement with theoretical simulation, photoluminescence spectra have energy separation between light-hole and heavy-hole bands due to biaxial tension. The lowest threshold current density infinite cavity length J/sub th//N/sub w//sup infin// of 100 A/cm/sup 2/ obtained the device -1.15% strain N/sub w/=3. amount which gives experimentally clarified around -1.2%. Threshold a buried-heterostructure (BH) laser reduced be as low 1.0 mA. Enhanced differential gain 7.1/spl times/10/sup -16/ cm/sup also confirmed by measurements relative intensity noise. Much improved characteristic feasibility submilliamp can achievable optimizing BH structure. tensile-strained QW very power consumption attractive light source fiber in loop system optical interconnection applications.
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