作者: Shreyas Patankar , J. P. Hinton , Joel Griesmar , J. Orenstein , J. S. Dodge
DOI: 10.1103/PHYSREVB.92.214440
关键词:
摘要: Here, we report measurements of the polar Kerr effect, proportional to out-of-plane component magnetization, in thin films magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3. Measurements complex angle ΘK were performed as a function photon energy range 0.8eV < ℏω 3.0eV. We observed peak real part ΘK(ω) and zero crossing imaginary that attribute resonant interaction with spin-orbit avoided located ≈ 1.6 eV above Fermi energy. The enhancement allows measurement temperature magnetic field dependence ultrathin film limit, d ≥ 2 quintuple layers (QL). find sharp transition remanent magnetization at 6 K for 8 QL, consistent theories impurity spin interactions on thickness their location relative surfaces.